Aplicaciones

Semiconductor Wafer Fabrication

Fused quartz, sapphire, and technical ceramic components for diffusion, CVD, plasma etch, CMP, and wet cleaning processes in silicon wafer manufacturing.

Fused Quartz & Ceramics in Semiconductor Wafer Fabrication

Silicon wafer fabrication (the “front end” of semiconductor manufacturing) requires process components that survive extreme temperatures, aggressive chemistries, and plasma environments while contributing zero contamination to the silicon wafer. Fused quartz, sapphire, and technical ceramics are the only materials that meet these requirements.


Process-by-Process Component Guide

Thermal Oxidation & Diffusion (600–1200°C)

The oldest and most established semiconductor processes — growing SiO₂ on silicon or diffusing dopants (B, P, As) — use horizontal or vertical furnaces lined with quartz hardware.

ComponentMaterialFunction
Process tube (inner)Synthetic fused silica Grade 2Reaction chamber; zero metal contamination
Process tube (outer)Natural fused quartz Grade 1Thermal isolation
Wafer boatFused quartz Grade 1 or 2Holds wafers at pitch ±0.1 mm
BafflesFused quartz Grade 1 / Opaque Grade 3Gas flow conditioning
Push rodFused quartz Grade 1Boat loading/unloading
FlangeFused quartz Grade 1Tube-to-furnace interface

Low-Pressure CVD (LPCVD)

LPCVD deposits thin films (poly-Si, SiO₂, Si₃N₄, WSi₂) at 600–900°C and pressures of 0.1–10 Torr. The deposition environment is corrosive to metals and requires ultra-low contamination quartz hardware.

ComponentMaterialKey Requirement
Reactor tubeSynthetic fused silica Grade 2< 50 ppb total metals; polished inner bore
Gas injectorSynthetic fused silica Grade 2Precise hole array ±0.02 mm; He leak < 10⁻⁹
Wafer boatSynthetic fused silica Grade 2Slot pitch ±0.1 mm; no SiC or ceramic contamination
Viewport windowFused quartz or sapphireIn-situ monitoring

Plasma Etch (RIE, ICP, CCP)

Reactive plasma etching (fluorine, chlorine, bromine chemistry) operates at room temperature but subjects chamber hardware to intense ion bombardment. Quartz is preferred for its self-passivating behavior in fluorine plasma.

ComponentMaterialWhy
Focus ring / edge ringFused quartz Grade 1Self-limiting fluorine attack; low contamination
Dome / linerFused quartz Grade 1Plasma-facing enclosure
ViewportSapphireSuperior plasma erosion resistance vs. quartz
Chamber linerAlumina 99.5%Longer life in Cl₂/Br₂ chemistry than quartz

Wet Cleaning (HF, RCA, Piranha)

Wet chemical cleaning removes particles, organics, and metals from wafer surfaces before and after deposition steps.

ComponentMaterialChemistry Handled
Cleaning tankFused quartz Grade 1HF, BHF, SC-1, SC-2, Piranha
Overflow tankFused quartz Grade 1DI water rinse
Gas spargerFused quartz Grade 1O₃, N₂ bubbling
Wafer cassetteFused quartz or aluminaPart carrier in chemical bath

Rapid Thermal Processing (RTP)

RTP systems heat a single wafer from room temperature to > 1000°C in seconds using tungsten-halogen or arc lamps. The transparent quartz or SiC reactor dome must transmit radiant energy and survive thermal shock.

ComponentMaterialKey Requirement
Process domeFused quartz Grade 2High UV-VIS-NIR transmission; < 10 nm/cm birefringence
SiC susceptorReaction-bonded SiCΔT > 400°C thermal shock; 1380°C continuous
Pyrometry windowSapphireMid-IR transparency for temperature measurement
Quartz windowSynthetic fused silicaLamp-to-process zone light transmission

Why Tuguan for Semiconductor Components?

  • Dedicated quartz-only machining cells — no metallic cross-contamination
  • ISO Class 7 cleanroom for final cleaning and inspection
  • Grade 2 synthetic silica (< 50 ppb metals) stocked in standard tube, rod, and plate formats
  • Full QC package — CMM + Ra + He leak + ICP-OES available on every shipment
  • Replacement parts program — OEM-compatible focus rings, boats, and tubes to drawing

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